Trilayer Tunnel Selectors for Memristor Memory Cells

Byung Joon Choi; Jiaming Zhang; Kate Norris; Gary Gibson; Kyung Min Kim; Warren Jackson; Min Xian Max Zhang; Zhiyong Li; J. Joshua Yang; R. Stanley Williams

doi:10.1002/adma.201503604

Trilayer Tunnel Selectors for Memristor Memory Cells

Byung Joon Choi
, Jiaming Zhang
, Kate Norris
, Gary Gibson
, Kyung Min Kim
, Warren Jackson
, Min Xian Max Zhang
, Zhiyong Li
, J. Joshua Yang
, R. Stanley Williams

Dept. of Materials Science & Engineering

Research output: Contribution to journal › Article › peer-review

101 Scopus citations

Abstract

An integrated memory cell with a memristor and a trilayer crested barrier selector, showing repeatable nonlinear current-voltage switching loops is presented. The fully atomic-layer-deposited TaN_1+x/Ta₂O₅/TaN_1+x crested barrier selector yields a large nonlinearity (>10⁴), high endurance (>10⁸), low variability, and low temperature dependence.

Original language	English
Pages (from-to)	356-362
Number of pages	7
Journal	Advanced Materials
Volume	28
Issue number	2
DOIs	https://doi.org/10.1002/adma.201503604
State	Published - 13 Jan 2016

Keywords

crested barriers
memory cells
memristor
RRAM
tunneling

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10.1002/adma.201503604

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title = "Trilayer Tunnel Selectors for Memristor Memory Cells",

abstract = "An integrated memory cell with a memristor and a trilayer crested barrier selector, showing repeatable nonlinear current-voltage switching loops is presented. The fully atomic-layer-deposited TaN1+x/Ta2O5/TaN1+x crested barrier selector yields a large nonlinearity (>104), high endurance (>108), low variability, and low temperature dependence.",

keywords = "crested barriers, memory cells, memristor, RRAM, tunneling",

author = "Choi, \{Byung Joon\} and Jiaming Zhang and Kate Norris and Gary Gibson and Kim, \{Kyung Min\} and Warren Jackson and Zhang, \{Min Xian Max\} and Zhiyong Li and Yang, \{J. Joshua\} and Williams, \{R. Stanley\}",

note = "Publisher Copyright: {\textcopyright} 2015 WILEY-VCH Verlag GmbH \& Co. KGaA, Weinheim.",

year = "2016",

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T1 - Trilayer Tunnel Selectors for Memristor Memory Cells

AU - Choi, Byung Joon

AU - Zhang, Jiaming

AU - Norris, Kate

AU - Gibson, Gary

AU - Kim, Kyung Min

AU - Jackson, Warren

AU - Zhang, Min Xian Max

AU - Li, Zhiyong

AU - Yang, J. Joshua

AU - Williams, R. Stanley

PY - 2016/1/13

Y1 - 2016/1/13

N2 - An integrated memory cell with a memristor and a trilayer crested barrier selector, showing repeatable nonlinear current-voltage switching loops is presented. The fully atomic-layer-deposited TaN1+x/Ta2O5/TaN1+x crested barrier selector yields a large nonlinearity (>104), high endurance (>108), low variability, and low temperature dependence.

AB - An integrated memory cell with a memristor and a trilayer crested barrier selector, showing repeatable nonlinear current-voltage switching loops is presented. The fully atomic-layer-deposited TaN1+x/Ta2O5/TaN1+x crested barrier selector yields a large nonlinearity (>104), high endurance (>108), low variability, and low temperature dependence.

KW - crested barriers

KW - memory cells

KW - memristor

KW - RRAM

KW - tunneling

UR - https://www.scopus.com/pages/publications/84954026527

U2 - 10.1002/adma.201503604

DO - 10.1002/adma.201503604

M3 - Article

AN - SCOPUS:84954026527

SN - 0935-9648

VL - 28

SP - 356

EP - 362

JO - Advanced Materials

JF - Advanced Materials

IS - 2

ER -

Trilayer Tunnel Selectors for Memristor Memory Cells

Abstract

Keywords

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