Trilayer Tunnel Selectors for Memristor Memory Cells

Byung Joon Choi; Jiaming Zhang; Kate Norris; Gary Gibson; Kyung Min Kim; Warren Jackson; Min Xian Max Zhang; Zhiyong Li; J. Joshua Yang; R. Stanley Williams

doi:10.1002/adma.201503604

Trilayer Tunnel Selectors for Memristor Memory Cells

Byung Joon Choi, Jiaming Zhang, Kate Norris, Gary Gibson, Kyung Min Kim, Warren Jackson, Min Xian Max Zhang, Zhiyong Li, J. Joshua Yang, R. Stanley Williams

Dept. of Materials Science & Engineering

Research output: Contribution to journal › Article › peer-review

100 Scopus citations

Abstract

An integrated memory cell with a memristor and a trilayer crested barrier selector, showing repeatable nonlinear current-voltage switching loops is presented. The fully atomic-layer-deposited TaN_1+x/Ta₂O₅/TaN_1+x crested barrier selector yields a large nonlinearity (>10⁴), high endurance (>10⁸), low variability, and low temperature dependence.

Original language	English
Pages (from-to)	356-362
Number of pages	7
Journal	Advanced Materials
Volume	28
Issue number	2
DOIs	https://doi.org/10.1002/adma.201503604
State	Published - 13 Jan 2016

Keywords

crested barriers
memory cells
memristor
RRAM
tunneling

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10.1002/adma.201503604

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title = "Trilayer Tunnel Selectors for Memristor Memory Cells",

abstract = "An integrated memory cell with a memristor and a trilayer crested barrier selector, showing repeatable nonlinear current-voltage switching loops is presented. The fully atomic-layer-deposited TaN1+x/Ta2O5/TaN1+x crested barrier selector yields a large nonlinearity (>104), high endurance (>108), low variability, and low temperature dependence.",

keywords = "crested barriers, memory cells, memristor, RRAM, tunneling",

author = "Choi, \{Byung Joon\} and Jiaming Zhang and Kate Norris and Gary Gibson and Kim, \{Kyung Min\} and Warren Jackson and Zhang, \{Min Xian Max\} and Zhiyong Li and Yang, \{J. Joshua\} and Williams, \{R. Stanley\}",

note = "Publisher Copyright: {\textcopyright} 2015 WILEY-VCH Verlag GmbH \& Co. KGaA, Weinheim.",

year = "2016",

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T1 - Trilayer Tunnel Selectors for Memristor Memory Cells

AU - Choi, Byung Joon

AU - Zhang, Jiaming

AU - Norris, Kate

AU - Gibson, Gary

AU - Kim, Kyung Min

AU - Jackson, Warren

AU - Zhang, Min Xian Max

AU - Li, Zhiyong

AU - Yang, J. Joshua

AU - Williams, R. Stanley

PY - 2016/1/13

Y1 - 2016/1/13

N2 - An integrated memory cell with a memristor and a trilayer crested barrier selector, showing repeatable nonlinear current-voltage switching loops is presented. The fully atomic-layer-deposited TaN1+x/Ta2O5/TaN1+x crested barrier selector yields a large nonlinearity (>104), high endurance (>108), low variability, and low temperature dependence.

AB - An integrated memory cell with a memristor and a trilayer crested barrier selector, showing repeatable nonlinear current-voltage switching loops is presented. The fully atomic-layer-deposited TaN1+x/Ta2O5/TaN1+x crested barrier selector yields a large nonlinearity (>104), high endurance (>108), low variability, and low temperature dependence.

KW - crested barriers

KW - memory cells

KW - memristor

KW - RRAM

KW - tunneling

UR - https://www.scopus.com/pages/publications/84954026527

U2 - 10.1002/adma.201503604

DO - 10.1002/adma.201503604

M3 - Article

AN - SCOPUS:84954026527

SN - 0935-9648

VL - 28

SP - 356

EP - 362

JO - Advanced Materials

JF - Advanced Materials

IS - 2

ER -

Trilayer Tunnel Selectors for Memristor Memory Cells

Abstract

Keywords

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