Tunable piezoresistance and noise in gate-all-around nanowire field-effect-transistor

Pushpapraj Singh; Woo Tae Park; Jianmin Miao; Lichun Shao; Rama Krishna Kotlanka; Dim Lee Kwong

doi:10.1063/1.3683516

Tunable piezoresistance and noise in gate-all-around nanowire field-effect-transistor

Pushpapraj Singh, Woo Tae Park, Jianmin Miao, Lichun Shao, Rama Krishna Kotlanka, Dim Lee Kwong

Dept. of Mechanical & Automotive Engineering

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

The piezoresistance and noise of n-type gate-all-around nanowire field-effect-transistor (NWFET) is investigated as a function of gate bias. With narrow gate bias span of 0.6 V near threshold region, the piezoresistive coefficient of NWFET enhances up to seven times from 29 × 10 ^-11 Pa ^-1 to 207 × 10 ^-11 Pa ^-1 under compressive and tensile strain conditions. Results reveal that the low frequency noise is reduced when operated in subthreshold region. The higher piezoresistive coefficient and reduced noise improve the sensor resolution (minimum detectable strain) by sixteen times. NWFET operates at low bias with higher piezoresistance and signal-to-noise ratio and offers promising applications in strain sensors.

Original language	English
Article number	063106
Journal	Applied Physics Letters
Volume	100
Issue number	6
DOIs	https://doi.org/10.1063/1.3683516
State	Published - 6 Feb 2012

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title = "Tunable piezoresistance and noise in gate-all-around nanowire field-effect-transistor",

abstract = "The piezoresistance and noise of n-type gate-all-around nanowire field-effect-transistor (NWFET) is investigated as a function of gate bias. With narrow gate bias span of 0.6 V near threshold region, the piezoresistive coefficient of NWFET enhances up to seven times from 29 × 10 -11 Pa -1 to 207 × 10 -11 Pa -1 under compressive and tensile strain conditions. Results reveal that the low frequency noise is reduced when operated in subthreshold region. The higher piezoresistive coefficient and reduced noise improve the sensor resolution (minimum detectable strain) by sixteen times. NWFET operates at low bias with higher piezoresistance and signal-to-noise ratio and offers promising applications in strain sensors.",

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T1 - Tunable piezoresistance and noise in gate-all-around nanowire field-effect-transistor

AU - Singh, Pushpapraj

AU - Park, Woo Tae

AU - Miao, Jianmin

AU - Shao, Lichun

AU - Krishna Kotlanka, Rama

AU - Kwong, Dim Lee

PY - 2012/2/6

Y1 - 2012/2/6

N2 - The piezoresistance and noise of n-type gate-all-around nanowire field-effect-transistor (NWFET) is investigated as a function of gate bias. With narrow gate bias span of 0.6 V near threshold region, the piezoresistive coefficient of NWFET enhances up to seven times from 29 × 10 -11 Pa -1 to 207 × 10 -11 Pa -1 under compressive and tensile strain conditions. Results reveal that the low frequency noise is reduced when operated in subthreshold region. The higher piezoresistive coefficient and reduced noise improve the sensor resolution (minimum detectable strain) by sixteen times. NWFET operates at low bias with higher piezoresistance and signal-to-noise ratio and offers promising applications in strain sensors.

AB - The piezoresistance and noise of n-type gate-all-around nanowire field-effect-transistor (NWFET) is investigated as a function of gate bias. With narrow gate bias span of 0.6 V near threshold region, the piezoresistive coefficient of NWFET enhances up to seven times from 29 × 10 -11 Pa -1 to 207 × 10 -11 Pa -1 under compressive and tensile strain conditions. Results reveal that the low frequency noise is reduced when operated in subthreshold region. The higher piezoresistive coefficient and reduced noise improve the sensor resolution (minimum detectable strain) by sixteen times. NWFET operates at low bias with higher piezoresistance and signal-to-noise ratio and offers promising applications in strain sensors.

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VL - 100

JO - Applied Physics Letters

JF - Applied Physics Letters

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ER -

Tunable piezoresistance and noise in gate-all-around nanowire field-effect-transistor

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