TY - JOUR
T1 - Two-Step Ar/N Plasma Treatment on SiO Surface for Cu/SiO Hybrid Bonding
AU - Park, Sangwoo
AU - Lee, Sangmin
AU - Kim, Sarah Eunkyung
N1 - Publisher Copyright:
© 2011-2012 IEEE.
PY - 2024/4/1
Y1 - 2024/4/1
N2 - A surface pretreatment is a critical process in low-temperature Cu/SiO2 hybrid bonding, significantly improving the quality of bond for both the Cu-Cu and SiO2-SiO2 interfaces. Previously, we demonstrated that a two-step Ar/N2 plasma treatment could effectively enhance both the quality of Cu-Cu bonding and the antioxidative properties of copper surfaces through copper nitridation. In this study, we investigated the effects of a two-step Ar/N2 plasma treatment on a SiO2 surface for application to Cu/SiO2 hybrid bonding. The chemical states of a SiO2 surface were measured using X-ray photoelectron spectroscopy (XPS) after the two-step Ar/N2 plasma treatment, indicating that the SiO2 surface reacted with the N2 plasma and led to the substitution of oxygen in the Si-O bonds with nitrogen and the formation of three distinct entities, -N(-Si) 2, N+(-Si)2, and N(-Si)3. After SiO2-SiO2 bonding, Si nanocrystals were exclusively observed at the bonding interface in the two-step Ar/N2 plasma-treated specimen, in contrast to nonplasma-treated specimen, as indicated by a transmission electron microscope (TEM) analysis. Shear tests were conducted to assess the bonding strength of SiO2-SiO2, revealing that the specimens treated with the two-step Ar/N2 plasma process exhibited on average double the shear strength compared to nonplasma-treated specimens.
AB - A surface pretreatment is a critical process in low-temperature Cu/SiO2 hybrid bonding, significantly improving the quality of bond for both the Cu-Cu and SiO2-SiO2 interfaces. Previously, we demonstrated that a two-step Ar/N2 plasma treatment could effectively enhance both the quality of Cu-Cu bonding and the antioxidative properties of copper surfaces through copper nitridation. In this study, we investigated the effects of a two-step Ar/N2 plasma treatment on a SiO2 surface for application to Cu/SiO2 hybrid bonding. The chemical states of a SiO2 surface were measured using X-ray photoelectron spectroscopy (XPS) after the two-step Ar/N2 plasma treatment, indicating that the SiO2 surface reacted with the N2 plasma and led to the substitution of oxygen in the Si-O bonds with nitrogen and the formation of three distinct entities, -N(-Si) 2, N+(-Si)2, and N(-Si)3. After SiO2-SiO2 bonding, Si nanocrystals were exclusively observed at the bonding interface in the two-step Ar/N2 plasma-treated specimen, in contrast to nonplasma-treated specimen, as indicated by a transmission electron microscope (TEM) analysis. Shear tests were conducted to assess the bonding strength of SiO2-SiO2, revealing that the specimens treated with the two-step Ar/N2 plasma process exhibited on average double the shear strength compared to nonplasma-treated specimens.
KW - Heterogeneous integration (HI)
KW - SiO2-SiO2 bonding
KW - hybrid bonding
KW - plasma treatment
KW - silicon oxide
UR - https://www.scopus.com/pages/publications/85188679621
U2 - 10.1109/TCPMT.2024.3379117
DO - 10.1109/TCPMT.2024.3379117
M3 - Article
AN - SCOPUS:85188679621
SN - 2156-3950
VL - 14
SP - 723
EP - 728
JO - IEEE Transactions on Components, Packaging and Manufacturing Technology
JF - IEEE Transactions on Components, Packaging and Manufacturing Technology
IS - 4
ER -