Ultra-Low-Temperature Deposition and Enhanced Bonding of SiCN Films for Advanced 3D Integration

Yeonju Kim; Donghyeok Choi; Jongshin Hyun; Byungjoo Jin; Jongkyung Park

doi:10.1109/TCPMT.2025.3617495

Ultra-Low-Temperature Deposition and Enhanced Bonding of SiCN Films for Advanced 3D Integration

Yeonju Kim, Donghyeok Choi, Jongshin Hyun, Byungjoo Jin, Jongkyung Park

Dept. of Semiconductor Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

This study explores the potential of SiCN films as a low-temperature alternative to SiO₂ insulators for hybrid bonding in 3D integration. SiCN films were deposited at 180°C and 350°C to investigate the effects of deposition temperature and composition on bonding performance. By optimizing precursor flow rates, we tailored the film properties, enhancing Si dangling bonds crucial for bonding. To achieve ultra-low-temperature bonding below 100°C, O₂ plasma and KOH surface treatments were employed, significantly improving bonding interfaces by increasing Si-OH groups on the surface. Our results demonstrate that SiCN films deposited at low temperatures can achieve bonding characteristics comparable to those of high-temperature films. The enhanced bonding performance is attributed to surface treatments that mitigate hydrogen content and promote Si-OH formation. The low-temperature bonding capabilities of SiCN contribute to reducing thermal budgets, preventing device degradation, and advancing 3D integration and hybrid bonding technologies for next-generation semiconductor applications.

Original language	English
Journal	IEEE Transactions on Components, Packaging and Manufacturing Technology
DOIs	https://doi.org/10.1109/TCPMT.2025.3617495
State	Accepted/In press - 2025

Keywords

3D Integration
Dangling bond
Hybrid bonding
KOH treatment
Low temperature
Plasma treatment
SiCN-SiCN dielectric bonding

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10.1109/TCPMT.2025.3617495

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@article{e3d52a8e4ce34df6b94938c96fb1b3ce,

title = "Ultra-Low-Temperature Deposition and Enhanced Bonding of SiCN Films for Advanced 3D Integration",

abstract = "This study explores the potential of SiCN films as a low-temperature alternative to SiO₂ insulators for hybrid bonding in 3D integration. SiCN films were deposited at 180°C and 350°C to investigate the effects of deposition temperature and composition on bonding performance. By optimizing precursor flow rates, we tailored the film properties, enhancing Si dangling bonds crucial for bonding. To achieve ultra-low-temperature bonding below 100°C, O₂ plasma and KOH surface treatments were employed, significantly improving bonding interfaces by increasing Si-OH groups on the surface. Our results demonstrate that SiCN films deposited at low temperatures can achieve bonding characteristics comparable to those of high-temperature films. The enhanced bonding performance is attributed to surface treatments that mitigate hydrogen content and promote Si-OH formation. The low-temperature bonding capabilities of SiCN contribute to reducing thermal budgets, preventing device degradation, and advancing 3D integration and hybrid bonding technologies for next-generation semiconductor applications.",

keywords = "3D Integration, Dangling bond, Hybrid bonding, KOH treatment, Low temperature, Plasma treatment, SiCN-SiCN dielectric bonding",

author = "Yeonju Kim and Donghyeok Choi and Jongshin Hyun and Byungjoo Jin and Jongkyung Park",

note = "Publisher Copyright: {\textcopyright} 2011-2012 IEEE.",

year = "2025",

doi = "10.1109/TCPMT.2025.3617495",

language = "English",

journal = "IEEE Transactions on Components, Packaging and Manufacturing Technology",

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TY - JOUR

T1 - Ultra-Low-Temperature Deposition and Enhanced Bonding of SiCN Films for Advanced 3D Integration

AU - Kim, Yeonju

AU - Choi, Donghyeok

AU - Hyun, Jongshin

AU - Jin, Byungjoo

AU - Park, Jongkyung

PY - 2025

Y1 - 2025

N2 - This study explores the potential of SiCN films as a low-temperature alternative to SiO₂ insulators for hybrid bonding in 3D integration. SiCN films were deposited at 180°C and 350°C to investigate the effects of deposition temperature and composition on bonding performance. By optimizing precursor flow rates, we tailored the film properties, enhancing Si dangling bonds crucial for bonding. To achieve ultra-low-temperature bonding below 100°C, O₂ plasma and KOH surface treatments were employed, significantly improving bonding interfaces by increasing Si-OH groups on the surface. Our results demonstrate that SiCN films deposited at low temperatures can achieve bonding characteristics comparable to those of high-temperature films. The enhanced bonding performance is attributed to surface treatments that mitigate hydrogen content and promote Si-OH formation. The low-temperature bonding capabilities of SiCN contribute to reducing thermal budgets, preventing device degradation, and advancing 3D integration and hybrid bonding technologies for next-generation semiconductor applications.

AB - This study explores the potential of SiCN films as a low-temperature alternative to SiO₂ insulators for hybrid bonding in 3D integration. SiCN films were deposited at 180°C and 350°C to investigate the effects of deposition temperature and composition on bonding performance. By optimizing precursor flow rates, we tailored the film properties, enhancing Si dangling bonds crucial for bonding. To achieve ultra-low-temperature bonding below 100°C, O₂ plasma and KOH surface treatments were employed, significantly improving bonding interfaces by increasing Si-OH groups on the surface. Our results demonstrate that SiCN films deposited at low temperatures can achieve bonding characteristics comparable to those of high-temperature films. The enhanced bonding performance is attributed to surface treatments that mitigate hydrogen content and promote Si-OH formation. The low-temperature bonding capabilities of SiCN contribute to reducing thermal budgets, preventing device degradation, and advancing 3D integration and hybrid bonding technologies for next-generation semiconductor applications.

KW - 3D Integration

KW - Dangling bond

KW - Hybrid bonding

KW - KOH treatment

KW - Low temperature

KW - Plasma treatment

KW - SiCN-SiCN dielectric bonding

UR - https://www.scopus.com/pages/publications/105018347252

U2 - 10.1109/TCPMT.2025.3617495

DO - 10.1109/TCPMT.2025.3617495

M3 - Article

AN - SCOPUS:105018347252

SN - 2156-3950

JO - IEEE Transactions on Components, Packaging and Manufacturing Technology

JF - IEEE Transactions on Components, Packaging and Manufacturing Technology

ER -

Ultra-Low-Temperature Deposition and Enhanced Bonding of SiCN Films for Advanced 3D Integration

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Keywords

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