Ultrasensitive pressure sensor based on gate- all-around nanowire fet

Pushpapraj Singh; Jianmin Miao; Woo Tae Park; Dim Lee Kwong

doi:10.1109/TRANSDUCERS.2011.5969792

Ultrasensitive pressure sensor based on gate- all-around nanowire fet

Pushpapraj Singh, Jianmin Miao, Woo Tae Park, Dim Lee Kwong

Dept. of Mechanical & Automotive Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Scopus citations

Abstract

There have been limited studies addressing how the fundamental factors affect the piezoresistive sensitivity of transistors. In this work, we demonstrate pressure sensor based on gate-all-around (GAA) nanowire field-effect transistor (NWFET) sensing element. We show eight times sensitivity enhancement of NWFET within a low gate bias (0.4V). The pressure sensitivity ((ΔI_DS/I_DS)/ΔP) of 0.0045 (psi)¹ is achieved for 3.5μm thick diaphragm. Result shows the picoampere current noise in subthreshold regime, which allows measurable output signal for the low pressure detection. Results reveal silicon channel GAA NWFET as a low bias controlled, miniaturized, and ultrasensitive sensing element for nanomechanical sensors.

Original language	English
Title of host publication	2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11
Pages	2734-2737
Number of pages	4
DOIs	https://doi.org/10.1109/TRANSDUCERS.2011.5969792
State	Published - 2011
Event	2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11 - Beijing, China Duration: 5 Jun 2011 → 9 Jun 2011

Publication series

Name	2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11

Conference

Conference	2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11
Country/Territory	China
City	Beijing
Period	5/06/11 → 9/06/11

Keywords

Gate-All-Around
Nanowire field-effect Transistor
Peizoresistivity
Pressure Sensor

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10.1109/TRANSDUCERS.2011.5969792

Cite this

Singh, P., Miao, J., Park, W. T., & Kwong, D. L. (2011). Ultrasensitive pressure sensor based on gate- all-around nanowire fet. In 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11 (pp. 2734-2737). Article 5969792 (2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11). https://doi.org/10.1109/TRANSDUCERS.2011.5969792

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title = "Ultrasensitive pressure sensor based on gate- all-around nanowire fet",

abstract = "There have been limited studies addressing how the fundamental factors affect the piezoresistive sensitivity of transistors. In this work, we demonstrate pressure sensor based on gate-all-around (GAA) nanowire field-effect transistor (NWFET) sensing element. We show eight times sensitivity enhancement of NWFET within a low gate bias (0.4V). The pressure sensitivity ((ΔIDS/IDS)/ΔP) of 0.0045 (psi)1 is achieved for 3.5μm thick diaphragm. Result shows the picoampere current noise in subthreshold regime, which allows measurable output signal for the low pressure detection. Results reveal silicon channel GAA NWFET as a low bias controlled, miniaturized, and ultrasensitive sensing element for nanomechanical sensors.",

keywords = "Gate-All-Around, Nanowire field-effect Transistor, Peizoresistivity, Pressure Sensor",

author = "Pushpapraj Singh and Jianmin Miao and Park, \{Woo Tae\} and Kwong, \{Dim Lee\}",

year = "2011",

doi = "10.1109/TRANSDUCERS.2011.5969792",

language = "English",

isbn = "9781457701573",

series = "2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11",

pages = "2734--2737",

booktitle = "2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11",

note = "2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11 ; Conference date: 05-06-2011 Through 09-06-2011",

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Singh, P, Miao, J, Park, WT & Kwong, DL 2011, Ultrasensitive pressure sensor based on gate- all-around nanowire fet. in 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11., 5969792, 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11, pp. 2734-2737, 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11, Beijing, China, 5/06/11. https://doi.org/10.1109/TRANSDUCERS.2011.5969792

Ultrasensitive pressure sensor based on gate- all-around nanowire fet. / Singh, Pushpapraj; Miao, Jianmin; Park, Woo Tae et al.
2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11. 2011. p. 2734-2737 5969792 (2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Ultrasensitive pressure sensor based on gate- all-around nanowire fet

AU - Singh, Pushpapraj

AU - Miao, Jianmin

AU - Park, Woo Tae

AU - Kwong, Dim Lee

PY - 2011

Y1 - 2011

N2 - There have been limited studies addressing how the fundamental factors affect the piezoresistive sensitivity of transistors. In this work, we demonstrate pressure sensor based on gate-all-around (GAA) nanowire field-effect transistor (NWFET) sensing element. We show eight times sensitivity enhancement of NWFET within a low gate bias (0.4V). The pressure sensitivity ((ΔIDS/IDS)/ΔP) of 0.0045 (psi)1 is achieved for 3.5μm thick diaphragm. Result shows the picoampere current noise in subthreshold regime, which allows measurable output signal for the low pressure detection. Results reveal silicon channel GAA NWFET as a low bias controlled, miniaturized, and ultrasensitive sensing element for nanomechanical sensors.

AB - There have been limited studies addressing how the fundamental factors affect the piezoresistive sensitivity of transistors. In this work, we demonstrate pressure sensor based on gate-all-around (GAA) nanowire field-effect transistor (NWFET) sensing element. We show eight times sensitivity enhancement of NWFET within a low gate bias (0.4V). The pressure sensitivity ((ΔIDS/IDS)/ΔP) of 0.0045 (psi)1 is achieved for 3.5μm thick diaphragm. Result shows the picoampere current noise in subthreshold regime, which allows measurable output signal for the low pressure detection. Results reveal silicon channel GAA NWFET as a low bias controlled, miniaturized, and ultrasensitive sensing element for nanomechanical sensors.

KW - Gate-All-Around

KW - Nanowire field-effect Transistor

KW - Peizoresistivity

KW - Pressure Sensor

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DO - 10.1109/TRANSDUCERS.2011.5969792

M3 - Conference contribution

AN - SCOPUS:80052116233

SN - 9781457701573

T3 - 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11

SP - 2734

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BT - 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11

T2 - 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11

Y2 - 5 June 2011 through 9 June 2011

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Singh P, Miao J, Park WT, Kwong DL. Ultrasensitive pressure sensor based on gate- all-around nanowire fet. In 2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11. 2011. p. 2734-2737. 5969792. (2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, TRANSDUCERS'11). doi: 10.1109/TRANSDUCERS.2011.5969792

Ultrasensitive pressure sensor based on gate- all-around nanowire fet

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