Ultraviolet light-emitting diodes with self-assembled InGaN quantum dots

Il Kyu Park; Min Ki Kwon; Seong Bum Seo; Ja Yeon Kim; Jae Hong Lim; Seong Ju Park

doi:10.1063/1.2712804

Ultraviolet light-emitting diodes with self-assembled InGaN quantum dots

Il Kyu Park, Min Ki Kwon, Seong Bum Seo, Ja Yeon Kim, Jae Hong Lim, Seong Ju Park

Dept. of Materials Science & Engineering

Gwangju Institute of Science and Technology

Research output: Contribution to journal › Article › peer-review

38 Scopus citations

Abstract

A photoluminescence study showed that the self-assembled InGaN quantum dots (QDs) provide strongly localized recombination sites for carriers and that the piezoelectric field-induced quantum-confined Stark effect (QCSE) is small because the height of QDs is too small to separate the wave functions of electrons and holes. The InGaN QD light-emitting diode (LED) showed an emission peak at 400 nm, and the peak was redshifted with increasing injection current, indicating a small QCSE. The light output power of an InGaN QD LED increased linearly with increasing injection current due to the strongly localized recombination sites of the InGaN QDs.

Original language	English
Article number	111116
Journal	Applied Physics Letters
Volume	90
Issue number	11
DOIs	https://doi.org/10.1063/1.2712804
State	Published - 2007

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title = "Ultraviolet light-emitting diodes with self-assembled InGaN quantum dots",

abstract = "A photoluminescence study showed that the self-assembled InGaN quantum dots (QDs) provide strongly localized recombination sites for carriers and that the piezoelectric field-induced quantum-confined Stark effect (QCSE) is small because the height of QDs is too small to separate the wave functions of electrons and holes. The InGaN QD light-emitting diode (LED) showed an emission peak at 400 nm, and the peak was redshifted with increasing injection current, indicating a small QCSE. The light output power of an InGaN QD LED increased linearly with increasing injection current due to the strongly localized recombination sites of the InGaN QDs.",

author = "Park, \{Il Kyu\} and Kwon, \{Min Ki\} and Seo, \{Seong Bum\} and Kim, \{Ja Yeon\} and Lim, \{Jae Hong\} and Park, \{Seong Ju\}",

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language = "English",

volume = "90",

journal = "Applied Physics Letters",

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T1 - Ultraviolet light-emitting diodes with self-assembled InGaN quantum dots

AU - Park, Il Kyu

AU - Kwon, Min Ki

AU - Seo, Seong Bum

AU - Kim, Ja Yeon

AU - Lim, Jae Hong

AU - Park, Seong Ju

PY - 2007

Y1 - 2007

N2 - A photoluminescence study showed that the self-assembled InGaN quantum dots (QDs) provide strongly localized recombination sites for carriers and that the piezoelectric field-induced quantum-confined Stark effect (QCSE) is small because the height of QDs is too small to separate the wave functions of electrons and holes. The InGaN QD light-emitting diode (LED) showed an emission peak at 400 nm, and the peak was redshifted with increasing injection current, indicating a small QCSE. The light output power of an InGaN QD LED increased linearly with increasing injection current due to the strongly localized recombination sites of the InGaN QDs.

AB - A photoluminescence study showed that the self-assembled InGaN quantum dots (QDs) provide strongly localized recombination sites for carriers and that the piezoelectric field-induced quantum-confined Stark effect (QCSE) is small because the height of QDs is too small to separate the wave functions of electrons and holes. The InGaN QD light-emitting diode (LED) showed an emission peak at 400 nm, and the peak was redshifted with increasing injection current, indicating a small QCSE. The light output power of an InGaN QD LED increased linearly with increasing injection current due to the strongly localized recombination sites of the InGaN QDs.

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U2 - 10.1063/1.2712804

DO - 10.1063/1.2712804

M3 - Article

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SN - 0003-6951

VL - 90

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

M1 - 111116

ER -

Ultraviolet light-emitting diodes with self-assembled InGaN quantum dots

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