Unit-Cell Characterization for D-band Amplifier Design Using CMOS 40-nm technology

Sunwoo Kong; Seunghyun Jang; Seunghun Wang; Hui Dong Lee; Bong Hyuk Park; Seok Bong Hyun; Junghwan Hawang

doi:10.1109/ICCE-Asia59966.2023.10326422

Unit-Cell Characterization for D-band Amplifier Design Using CMOS 40-nm technology

Sunwoo Kong
, Seunghyun Jang
, Seunghun Wang
, Hui Dong Lee
, Bong Hyuk Park
, Seok Bong Hyun
, Junghwan Hawang

Electronic Engineering Program

Electronics and Telecommunications Research Institute

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The paper discussed the feasibility of using CMOS for D-band wireless communication. We designed and measured an amplifier unit cell using the BULK CMOS 40-nm process. The unit cell achieved a gain of 1.21 dB at 145 GHz and a bandwidth of 36.4 GHz, with a power consumption of 3 mA at 1 V. This shows that CMOS can be used to achieve the desired performance and bandwidth for D-band wireless communication, while also being more cost-effective than compound semiconductor processes.

Original language	English
Title of host publication	2023 IEEE International Conference on Consumer Electronics-Asia, ICCE-Asia 2023
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9798350344318
DOIs	https://doi.org/10.1109/ICCE-Asia59966.2023.10326422
State	Published - 2023
Event	2023 IEEE International Conference on Consumer Electronics-Asia, ICCE-Asia 2023 - Busan, Korea, Republic of Duration: 23 Oct 2023 → 25 Oct 2023

Publication series

Name	2023 IEEE International Conference on Consumer Electronics-Asia, ICCE-Asia 2023

Conference

Conference	2023 IEEE International Conference on Consumer Electronics-Asia, ICCE-Asia 2023
Country/Territory	Korea, Republic of
City	Busan
Period	23/10/23 → 25/10/23

Keywords

amplifier
D-band
Marchand balun

Access to Document

10.1109/ICCE-Asia59966.2023.10326422

Cite this

Kong, S., Jang, S., Wang, S., Lee, H. D., Park, B. H., Hyun, S. B., & Hawang, J. (2023). Unit-Cell Characterization for D-band Amplifier Design Using CMOS 40-nm technology. In 2023 IEEE International Conference on Consumer Electronics-Asia, ICCE-Asia 2023 (2023 IEEE International Conference on Consumer Electronics-Asia, ICCE-Asia 2023). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICCE-Asia59966.2023.10326422

@inproceedings{b7244213ebac49e688f04568803150ac,

title = "Unit-Cell Characterization for D-band Amplifier Design Using CMOS 40-nm technology",

abstract = "The paper discussed the feasibility of using CMOS for D-band wireless communication. We designed and measured an amplifier unit cell using the BULK CMOS 40-nm process. The unit cell achieved a gain of 1.21 dB at 145 GHz and a bandwidth of 36.4 GHz, with a power consumption of 3 mA at 1 V. This shows that CMOS can be used to achieve the desired performance and bandwidth for D-band wireless communication, while also being more cost-effective than compound semiconductor processes.",

keywords = "amplifier, D-band, Marchand balun",

author = "Sunwoo Kong and Seunghyun Jang and Seunghun Wang and Lee, \{Hui Dong\} and Park, \{Bong Hyuk\} and Hyun, \{Seok Bong\} and Junghwan Hawang",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 2023 IEEE International Conference on Consumer Electronics-Asia, ICCE-Asia 2023 ; Conference date: 23-10-2023 Through 25-10-2023",

year = "2023",

doi = "10.1109/ICCE-Asia59966.2023.10326422",

language = "English",

series = "2023 IEEE International Conference on Consumer Electronics-Asia, ICCE-Asia 2023",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2023 IEEE International Conference on Consumer Electronics-Asia, ICCE-Asia 2023",

}

Kong, S, Jang, S, Wang, S, Lee, HD, Park, BH, Hyun, SB & Hawang, J 2023, Unit-Cell Characterization for D-band Amplifier Design Using CMOS 40-nm technology. in 2023 IEEE International Conference on Consumer Electronics-Asia, ICCE-Asia 2023. 2023 IEEE International Conference on Consumer Electronics-Asia, ICCE-Asia 2023, Institute of Electrical and Electronics Engineers Inc., 2023 IEEE International Conference on Consumer Electronics-Asia, ICCE-Asia 2023, Busan, Korea, Republic of, 23/10/23. https://doi.org/10.1109/ICCE-Asia59966.2023.10326422

Unit-Cell Characterization for D-band Amplifier Design Using CMOS 40-nm technology. / Kong, Sunwoo; Jang, Seunghyun; Wang, Seunghun et al.
2023 IEEE International Conference on Consumer Electronics-Asia, ICCE-Asia 2023. Institute of Electrical and Electronics Engineers Inc., 2023. (2023 IEEE International Conference on Consumer Electronics-Asia, ICCE-Asia 2023).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Unit-Cell Characterization for D-band Amplifier Design Using CMOS 40-nm technology

AU - Kong, Sunwoo

AU - Jang, Seunghyun

AU - Wang, Seunghun

AU - Lee, Hui Dong

AU - Park, Bong Hyuk

AU - Hyun, Seok Bong

AU - Hawang, Junghwan

PY - 2023

Y1 - 2023

N2 - The paper discussed the feasibility of using CMOS for D-band wireless communication. We designed and measured an amplifier unit cell using the BULK CMOS 40-nm process. The unit cell achieved a gain of 1.21 dB at 145 GHz and a bandwidth of 36.4 GHz, with a power consumption of 3 mA at 1 V. This shows that CMOS can be used to achieve the desired performance and bandwidth for D-band wireless communication, while also being more cost-effective than compound semiconductor processes.

AB - The paper discussed the feasibility of using CMOS for D-band wireless communication. We designed and measured an amplifier unit cell using the BULK CMOS 40-nm process. The unit cell achieved a gain of 1.21 dB at 145 GHz and a bandwidth of 36.4 GHz, with a power consumption of 3 mA at 1 V. This shows that CMOS can be used to achieve the desired performance and bandwidth for D-band wireless communication, while also being more cost-effective than compound semiconductor processes.

KW - amplifier

KW - D-band

KW - Marchand balun

UR - https://www.scopus.com/pages/publications/85179880339

U2 - 10.1109/ICCE-Asia59966.2023.10326422

DO - 10.1109/ICCE-Asia59966.2023.10326422

M3 - Conference contribution

AN - SCOPUS:85179880339

T3 - 2023 IEEE International Conference on Consumer Electronics-Asia, ICCE-Asia 2023

BT - 2023 IEEE International Conference on Consumer Electronics-Asia, ICCE-Asia 2023

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2023 IEEE International Conference on Consumer Electronics-Asia, ICCE-Asia 2023

Y2 - 23 October 2023 through 25 October 2023

ER -

Kong S, Jang S, Wang S, Lee HD, Park BH, Hyun SB et al. Unit-Cell Characterization for D-band Amplifier Design Using CMOS 40-nm technology. In 2023 IEEE International Conference on Consumer Electronics-Asia, ICCE-Asia 2023. Institute of Electrical and Electronics Engineers Inc. 2023. (2023 IEEE International Conference on Consumer Electronics-Asia, ICCE-Asia 2023). doi: 10.1109/ICCE-Asia59966.2023.10326422

Unit-Cell Characterization for D-band Amplifier Design Using CMOS 40-nm technology

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