UV electroluminescence emission from ZnO light-emitting diodes grown by high-temperature radiofrequency sputtering

Jae Hong Lim; Chang Ku Kong; Kyoung Kook Kim; Il Kyu Park; Dae Kue Hwang; Seong Ju Park

doi:10.1002/adma.200502633

UV electroluminescence emission from ZnO light-emitting diodes grown by high-temperature radiofrequency sputtering

Jae Hong Lim, Chang Ku Kong, Kyoung Kook Kim, Il Kyu Park, Dae Kue Hwang, Seong Ju Park

Dept. of Materials Science & Engineering

Research output: Contribution to journal › Article › peer-review

658 Scopus citations

Abstract

The operation of a UV-light-emitting ZnO homojuction light-emitting diodes (LED) by growing P-doped p-type ZnO on Ga-doped n-type ZnO is presented. The Zno LED emitted 380 nm UV light at room temperature and showed clear rectification with a threshold voltage of 3.2 V. The intensity of near-bandedge emission was further increased and the deep-level emission was significantly suppressed by using Mg_0.1Zn_0.9O layers as energy barrier layers to confine the carriers to the high-quality n-type ZnO. The insertion of two Mg_0.1Zn_0.9O barrier layers enabled the confinement of the carrier recombination in the high-quality n-type ZnO between the two barrier layers, suppressing the defect-related peaks from the heterojunction ZnO LED. It also increases the electroluminescence (EL) intensity of bandedge emission by about 55% compared to the homojunction ZnO LEDs.

Original language	English
Pages (from-to)	2720-2724
Number of pages	5
Journal	Advanced Materials
Volume	18
Issue number	20
DOIs	https://doi.org/10.1002/adma.200502633
State	Published - 17 Oct 2006

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title = "UV electroluminescence emission from ZnO light-emitting diodes grown by high-temperature radiofrequency sputtering",

abstract = "The operation of a UV-light-emitting ZnO homojuction light-emitting diodes (LED) by growing P-doped p-type ZnO on Ga-doped n-type ZnO is presented. The Zno LED emitted 380 nm UV light at room temperature and showed clear rectification with a threshold voltage of 3.2 V. The intensity of near-bandedge emission was further increased and the deep-level emission was significantly suppressed by using Mg0.1Zn0.9O layers as energy barrier layers to confine the carriers to the high-quality n-type ZnO. The insertion of two Mg0.1Zn0.9O barrier layers enabled the confinement of the carrier recombination in the high-quality n-type ZnO between the two barrier layers, suppressing the defect-related peaks from the heterojunction ZnO LED. It also increases the electroluminescence (EL) intensity of bandedge emission by about 55\% compared to the homojunction ZnO LEDs.",

author = "Lim, \{Jae Hong\} and Kong, \{Chang Ku\} and Kim, \{Kyoung Kook\} and Park, \{Il Kyu\} and Hwang, \{Dae Kue\} and Park, \{Seong Ju\}",

year = "2006",

month = oct,

day = "17",

doi = "10.1002/adma.200502633",

language = "English",

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T1 - UV electroluminescence emission from ZnO light-emitting diodes grown by high-temperature radiofrequency sputtering

AU - Lim, Jae Hong

AU - Kong, Chang Ku

AU - Kim, Kyoung Kook

AU - Park, Il Kyu

AU - Hwang, Dae Kue

AU - Park, Seong Ju

PY - 2006/10/17

Y1 - 2006/10/17

N2 - The operation of a UV-light-emitting ZnO homojuction light-emitting diodes (LED) by growing P-doped p-type ZnO on Ga-doped n-type ZnO is presented. The Zno LED emitted 380 nm UV light at room temperature and showed clear rectification with a threshold voltage of 3.2 V. The intensity of near-bandedge emission was further increased and the deep-level emission was significantly suppressed by using Mg0.1Zn0.9O layers as energy barrier layers to confine the carriers to the high-quality n-type ZnO. The insertion of two Mg0.1Zn0.9O barrier layers enabled the confinement of the carrier recombination in the high-quality n-type ZnO between the two barrier layers, suppressing the defect-related peaks from the heterojunction ZnO LED. It also increases the electroluminescence (EL) intensity of bandedge emission by about 55% compared to the homojunction ZnO LEDs.

AB - The operation of a UV-light-emitting ZnO homojuction light-emitting diodes (LED) by growing P-doped p-type ZnO on Ga-doped n-type ZnO is presented. The Zno LED emitted 380 nm UV light at room temperature and showed clear rectification with a threshold voltage of 3.2 V. The intensity of near-bandedge emission was further increased and the deep-level emission was significantly suppressed by using Mg0.1Zn0.9O layers as energy barrier layers to confine the carriers to the high-quality n-type ZnO. The insertion of two Mg0.1Zn0.9O barrier layers enabled the confinement of the carrier recombination in the high-quality n-type ZnO between the two barrier layers, suppressing the defect-related peaks from the heterojunction ZnO LED. It also increases the electroluminescence (EL) intensity of bandedge emission by about 55% compared to the homojunction ZnO LEDs.

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U2 - 10.1002/adma.200502633

DO - 10.1002/adma.200502633

M3 - Article

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SN - 0935-9648

VL - 18

SP - 2720

EP - 2724

JO - Advanced Materials

JF - Advanced Materials

IS - 20

ER -

UV electroluminescence emission from ZnO light-emitting diodes grown by high-temperature radiofrequency sputtering

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