V-shaped metal-oxide-semiconductor transistor probe with nano tip for surface electric properties

Sang H. Lee; Geunbae Lim; Wonkyu Moon; Hyunjung Shin; Cheong Wol Kim

doi:10.1016/j.ultramic.2008.04.034

V-shaped metal-oxide-semiconductor transistor probe with nano tip for surface electric properties

Sang H. Lee, Geunbae Lim, Wonkyu Moon, Hyunjung Shin, Cheong Wol Kim

Dept. of Mechanical & Automotive Engineering

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

We design and fabricate a V-shaped metal-oxide-semiconductor (MOS) transistor probe with the focused-ion-beam (FIB) nano tip to measure surface electric properties. The V-shaped structure is selected for its better lateral stiffness, and the specific dimensions are determined using the parallel beam approximation (PBA). The deposition conditions for the nano tip are also investigated for better tip sharpness. The high working frequency of the MOS transistor improves the scanning speed and the high sensitivity reduces the additional equipment required. The detection properties of the device are investigated with PZT poling patterns. The measured results show well-defined patterns, promising that the device can detect surface electric properties with high sensitivity and high working frequency.

Original language	English
Pages (from-to)	1094-1100
Number of pages	7
Journal	Ultramicroscopy
Volume	108
Issue number	10
DOIs	https://doi.org/10.1016/j.ultramic.2008.04.034
State	Published - Sep 2008

Keywords

Focused ion beam
Metal-oxide-semiconductor transistor
Parallel beam approximation
Scanning probe microscopy
V-shaped cantilever

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10.1016/j.ultramic.2008.04.034

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title = "V-shaped metal-oxide-semiconductor transistor probe with nano tip for surface electric properties",

abstract = "We design and fabricate a V-shaped metal-oxide-semiconductor (MOS) transistor probe with the focused-ion-beam (FIB) nano tip to measure surface electric properties. The V-shaped structure is selected for its better lateral stiffness, and the specific dimensions are determined using the parallel beam approximation (PBA). The deposition conditions for the nano tip are also investigated for better tip sharpness. The high working frequency of the MOS transistor improves the scanning speed and the high sensitivity reduces the additional equipment required. The detection properties of the device are investigated with PZT poling patterns. The measured results show well-defined patterns, promising that the device can detect surface electric properties with high sensitivity and high working frequency.",

keywords = "Focused ion beam, Metal-oxide-semiconductor transistor, Parallel beam approximation, Scanning probe microscopy, V-shaped cantilever",

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T1 - V-shaped metal-oxide-semiconductor transistor probe with nano tip for surface electric properties

AU - Lee, Sang H.

AU - Lim, Geunbae

AU - Moon, Wonkyu

AU - Shin, Hyunjung

AU - Kim, Cheong Wol

PY - 2008/9

Y1 - 2008/9

N2 - We design and fabricate a V-shaped metal-oxide-semiconductor (MOS) transistor probe with the focused-ion-beam (FIB) nano tip to measure surface electric properties. The V-shaped structure is selected for its better lateral stiffness, and the specific dimensions are determined using the parallel beam approximation (PBA). The deposition conditions for the nano tip are also investigated for better tip sharpness. The high working frequency of the MOS transistor improves the scanning speed and the high sensitivity reduces the additional equipment required. The detection properties of the device are investigated with PZT poling patterns. The measured results show well-defined patterns, promising that the device can detect surface electric properties with high sensitivity and high working frequency.

AB - We design and fabricate a V-shaped metal-oxide-semiconductor (MOS) transistor probe with the focused-ion-beam (FIB) nano tip to measure surface electric properties. The V-shaped structure is selected for its better lateral stiffness, and the specific dimensions are determined using the parallel beam approximation (PBA). The deposition conditions for the nano tip are also investigated for better tip sharpness. The high working frequency of the MOS transistor improves the scanning speed and the high sensitivity reduces the additional equipment required. The detection properties of the device are investigated with PZT poling patterns. The measured results show well-defined patterns, promising that the device can detect surface electric properties with high sensitivity and high working frequency.

KW - Focused ion beam

KW - Metal-oxide-semiconductor transistor

KW - Parallel beam approximation

KW - Scanning probe microscopy

KW - V-shaped cantilever

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V-shaped metal-oxide-semiconductor transistor probe with nano tip for surface electric properties

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Keywords

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