Vertically Formed Graphene Stripe for 3D Field-Effect Transistor Applications

Seul Ki Hong; Jae Hoon Bong; Byung Jin Cho; Wan Sik Hwang

doi:10.1002/smll.201602373

Vertically Formed Graphene Stripe for 3D Field-Effect Transistor Applications

Seul Ki Hong, Jae Hoon Bong, Byung Jin Cho, Wan Sik Hwang

Dept. of Semiconductor Engineering

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

A 100-nm wide, vertically formed graphene stripe (GS) is demonstrated for three-dimensional (3D) electronic applications. The GS forms along the sidewall of a thin nickel film. It is possible to further scale down the GS width by engineering the deposited thickness of the atomic layer deposition (ALD) Ni film. Unlike a conventional GS or graphene nanoribbon (GNR), the vertically formed GS is made without a graphene transfer and etching process. The process integration of the proposed GS FETs resembles that of currently commercialized vertical NAND flash memory with a design rule of less than 20 nm, implying practical usage of this formed GS for 3D advanced FET applications.

Original language	English
Article number	1602373
Journal	Small
Volume	13
Issue number	3
DOIs	https://doi.org/10.1002/smll.201602373
State	Published - 18 Jan 2017

Keywords

3D devices
atomic layer deposition
field-effect transistors
graphene stripe
graphene transfer

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10.1002/smll.201602373

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title = "Vertically Formed Graphene Stripe for 3D Field-Effect Transistor Applications",

abstract = "A 100-nm wide, vertically formed graphene stripe (GS) is demonstrated for three-dimensional (3D) electronic applications. The GS forms along the sidewall of a thin nickel film. It is possible to further scale down the GS width by engineering the deposited thickness of the atomic layer deposition (ALD) Ni film. Unlike a conventional GS or graphene nanoribbon (GNR), the vertically formed GS is made without a graphene transfer and etching process. The process integration of the proposed GS FETs resembles that of currently commercialized vertical NAND flash memory with a design rule of less than 20 nm, implying practical usage of this formed GS for 3D advanced FET applications.",

keywords = "3D devices, atomic layer deposition, field-effect transistors, graphene stripe, graphene transfer",

author = "Hong, \{Seul Ki\} and Bong, \{Jae Hoon\} and Cho, \{Byung Jin\} and Hwang, \{Wan Sik\}",

note = "Publisher Copyright: {\textcopyright} 2016 WILEY-VCH Verlag GmbH \& Co. KGaA, Weinheim",

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AU - Hong, Seul Ki

AU - Bong, Jae Hoon

AU - Cho, Byung Jin

AU - Hwang, Wan Sik

PY - 2017/1/18

Y1 - 2017/1/18

N2 - A 100-nm wide, vertically formed graphene stripe (GS) is demonstrated for three-dimensional (3D) electronic applications. The GS forms along the sidewall of a thin nickel film. It is possible to further scale down the GS width by engineering the deposited thickness of the atomic layer deposition (ALD) Ni film. Unlike a conventional GS or graphene nanoribbon (GNR), the vertically formed GS is made without a graphene transfer and etching process. The process integration of the proposed GS FETs resembles that of currently commercialized vertical NAND flash memory with a design rule of less than 20 nm, implying practical usage of this formed GS for 3D advanced FET applications.

AB - A 100-nm wide, vertically formed graphene stripe (GS) is demonstrated for three-dimensional (3D) electronic applications. The GS forms along the sidewall of a thin nickel film. It is possible to further scale down the GS width by engineering the deposited thickness of the atomic layer deposition (ALD) Ni film. Unlike a conventional GS or graphene nanoribbon (GNR), the vertically formed GS is made without a graphene transfer and etching process. The process integration of the proposed GS FETs resembles that of currently commercialized vertical NAND flash memory with a design rule of less than 20 nm, implying practical usage of this formed GS for 3D advanced FET applications.

KW - 3D devices

KW - atomic layer deposition

KW - field-effect transistors

KW - graphene stripe

KW - graphene transfer

UR - https://www.scopus.com/pages/publications/85002188965

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DO - 10.1002/smll.201602373

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SN - 1613-6810

VL - 13

JO - Small

JF - Small

IS - 3

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ER -

Vertically Formed Graphene Stripe for 3D Field-Effect Transistor Applications

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