Zn-doping induced phase control mechanism of Ga2O3 thin films by spray pyrolysis deposition for application of solar-blind ultraviolet photodetector

Yuna Choi; Sang Seok Lee; Woo Jin Lee; Il Kyu Park

doi:10.1016/j.mtchem.2023.101738

Zn-doping induced phase control mechanism of Ga₂O₃ thin films by spray pyrolysis deposition for application of solar-blind ultraviolet photodetector

Yuna Choi, Sang Seok Lee, Woo Jin Lee, Il Kyu Park

Dept. of Materials Science & Engineering

Seoul National University of Science and Technology (SNUST)

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

Ga₂O₃ polymorphs have attracted considerable attention for optoelectronic and electronic device applications with high durability. Despite the many investigations, the crystal phase of Ga₂O₃ is difficult to control at low temperatures. In this study, the phase of Ga₂O₃ was controlled by Zn-doping at 500 °C by spray pyrolysis deposition. The pristine Ga₂O₃ showed the mixed α- and ε-phases, which disappeared with increasing Zn content from 0 to 60%. A single β-phase Ga₂O₃ thin film was formed when the Zn content was 60%. As the Zn content was increased to 120%, ZnO particles formed on the β-phase Ga₂O₃ surface. Therefore, the Zn dopants substitute for the Ga site and modify its coordination in the Ga₂O₃ matrix to form a β-phase Ga₂O₃. The β-Ga₂O₃ based solar-blind ultraviolet photodetector exhibited 1.645/0.581 s response times, a responsivity of 3.93 × 10⁻⁴ A W⁻¹, and a detectivity of 2.65 × 10¹⁰ Jones under a bias voltage of 20 V.

Original language	English
Article number	101738
Journal	Materials Today Chemistry
Volume	33
DOIs	https://doi.org/10.1016/j.mtchem.2023.101738
State	Published - Oct 2023

Keywords

Doping
GaO
Phase control
Photodetector
Solar-blind

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1016/j.mtchem.2023.101738

Cite this

@article{6aad79e5e92a4d2ab364287a26392b64,

title = "Zn-doping induced phase control mechanism of Ga2O3 thin films by spray pyrolysis deposition for application of solar-blind ultraviolet photodetector",

abstract = "Ga2O3 polymorphs have attracted considerable attention for optoelectronic and electronic device applications with high durability. Despite the many investigations, the crystal phase of Ga2O3 is difficult to control at low temperatures. In this study, the phase of Ga2O3 was controlled by Zn-doping at 500 °C by spray pyrolysis deposition. The pristine Ga2O3 showed the mixed α- and ε-phases, which disappeared with increasing Zn content from 0 to 60\%. A single β-phase Ga2O3 thin film was formed when the Zn content was 60\%. As the Zn content was increased to 120\%, ZnO particles formed on the β-phase Ga2O3 surface. Therefore, the Zn dopants substitute for the Ga site and modify its coordination in the Ga2O3 matrix to form a β-phase Ga2O3. The β-Ga2O3 based solar-blind ultraviolet photodetector exhibited 1.645/0.581 s response times, a responsivity of 3.93 × 10−4 A W−1, and a detectivity of 2.65 × 1010 Jones under a bias voltage of 20 V.",

keywords = "Doping, GaO, Phase control, Photodetector, Solar-blind",

author = "Yuna Choi and Lee, \{Sang Seok\} and Lee, \{Woo Jin\} and Park, \{Il Kyu\}",

note = "Publisher Copyright: {\textcopyright} 2023 Elsevier Ltd",

year = "2023",

month = oct,

doi = "10.1016/j.mtchem.2023.101738",

language = "English",

volume = "33",

journal = "Materials Today Chemistry",

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T1 - Zn-doping induced phase control mechanism of Ga2O3 thin films by spray pyrolysis deposition for application of solar-blind ultraviolet photodetector

AU - Choi, Yuna

AU - Lee, Sang Seok

AU - Lee, Woo Jin

AU - Park, Il Kyu

PY - 2023/10

Y1 - 2023/10

N2 - Ga2O3 polymorphs have attracted considerable attention for optoelectronic and electronic device applications with high durability. Despite the many investigations, the crystal phase of Ga2O3 is difficult to control at low temperatures. In this study, the phase of Ga2O3 was controlled by Zn-doping at 500 °C by spray pyrolysis deposition. The pristine Ga2O3 showed the mixed α- and ε-phases, which disappeared with increasing Zn content from 0 to 60%. A single β-phase Ga2O3 thin film was formed when the Zn content was 60%. As the Zn content was increased to 120%, ZnO particles formed on the β-phase Ga2O3 surface. Therefore, the Zn dopants substitute for the Ga site and modify its coordination in the Ga2O3 matrix to form a β-phase Ga2O3. The β-Ga2O3 based solar-blind ultraviolet photodetector exhibited 1.645/0.581 s response times, a responsivity of 3.93 × 10−4 A W−1, and a detectivity of 2.65 × 1010 Jones under a bias voltage of 20 V.

AB - Ga2O3 polymorphs have attracted considerable attention for optoelectronic and electronic device applications with high durability. Despite the many investigations, the crystal phase of Ga2O3 is difficult to control at low temperatures. In this study, the phase of Ga2O3 was controlled by Zn-doping at 500 °C by spray pyrolysis deposition. The pristine Ga2O3 showed the mixed α- and ε-phases, which disappeared with increasing Zn content from 0 to 60%. A single β-phase Ga2O3 thin film was formed when the Zn content was 60%. As the Zn content was increased to 120%, ZnO particles formed on the β-phase Ga2O3 surface. Therefore, the Zn dopants substitute for the Ga site and modify its coordination in the Ga2O3 matrix to form a β-phase Ga2O3. The β-Ga2O3 based solar-blind ultraviolet photodetector exhibited 1.645/0.581 s response times, a responsivity of 3.93 × 10−4 A W−1, and a detectivity of 2.65 × 1010 Jones under a bias voltage of 20 V.

KW - Doping

KW - GaO

KW - Phase control

KW - Photodetector

KW - Solar-blind

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