CMOS analog integrate-and-fire neuron circuit for driving memristor based on RRAM

We designed the CMOS analog integrate and fire (I&F) neuron circuit for driving memristor based on resistive-switching random access memory (RRAM). And we fabricated the RRAM device that have HfO₂ switching layer using atomic layer deposition (ALD). The RRAM device has gradual set and reset characteristics. By spice modeling of the synaptic device, we performed circuit simulation of synaptic device and CMOS neuron circuit. The neuron circuit consists of a current mirror for spatial integration, a capacitor for temporal integration, two inverters for pulse generation, a refractory part, and finally a feedback part for learning of the RRAM. We emulated the spike-timing-dependent-plasticity (STDP) characteristic that is performed automatically by presynaptic pulse and feedback signal of the neuron circuit. By STDP characteristics, the synaptic weight, conductance of the RRAM, is changed without additional control circuit.